Porous silicon photoluminescence (PL) quenching and recovery reasons

In the case of argon ion irradiation, irradiated porous silicon photoluminescence (PL) quenching occurs, and when the porous silicon after irradiation stored in the air, PL recovery will happen,  Photoluminescent Rigid Sheet  but the low strength of the final restoration in the luminous intensity of the original porous silicon. PL quenching of radiation due to the porous silicon surface defects, these defects as non-radiative recombination centers so that PL quenching occurs.

PL recovery and back key oxidized Si-H bond-related; in the case of nitrogen ion
irradiation, PL performance changes with argon ion irradiation is similar, but the strength of the recovery is stronger than the original PL porous silicon, which is the irradiation process Si-N bond formed about,  masterbatch production and in the process of irradiation of oxygen ions, oxygen ions are oxidized Si-H bonds is irradiated, the porous silicon surface shape.