Porous silicon photoluminescence (PL) quenching and recovery reasons

In the case of argon ion irradiation, irradiated porous silicon photoluminescence (PL) quenching occurs, and when the porous silicon after irradiation stored in the air, PL recovery will happen,  Photoluminescent Rigid Sheet  but the low strength of the final restoration in the luminous intensity of the original porous silicon. PL quenching of radiation due to the porous silicon surface defects, these defects as non-radiative recombination centers so that PL quenching occurs.

PL recovery and back key oxidized Si-H bond-related; in the case of nitrogen ion
irradiation, PL performance changes with argon ion irradiation is similar, but the strength of the recovery is stronger than the original PL porous silicon, which is the irradiation process Si-N bond formed about,  masterbatch production and in the process of irradiation of oxygen ions, oxygen ions are oxidized Si-H bonds is irradiated, the porous silicon surface shape.

The function and using method of IP consisting of Photoluminescent Rigid Sheet

IP is the medium of photography image transfer in CR system, it is composed of a supporting body, light induced light-emitting material and a protective layer, arranged in a special cartridge, Photoluminescent Rigid Sheet use method and ordinary film, photography only after not washing, sent directly to the image reading unit reading images.

There are two types of rigid and flexible laminates of the present IP, flexible plate is more common. The disadvantage is that the image reading is easy to cause scratches and rigid plate, glow in dark sheets only a few manufacturers can produce, it can effectively solve the problem of scratch.

Photography, IP in the fluorescent substance and through human X-ray signal corresponding reaction (one shot), the X-ray image like storage in the two-dimensional plane, photography after IP was sent to the image reader, image reading machine will to point the beam to it for full scan (secondary excitation), so that the memory from the luminescence of the X-ray signal, to read machine optical tube will be the collection and introduction of photomultiplier tubes, photomultiplier tube according to the intensity of the incident light sends out the corresponding Electronic, so as to change the optical signal into electrical signal, glow in the dark film and then send to the image processing workstation for digital processing of the signal.

IP can be reused, image reading after, IP was sent to a set of strong light irradiation, put the cleared all the latent image IP are then fed into the cassette to prepare for the next use. Can be reused 20000 times.

Effect of ion irradiation on the luminescence properties of porous silicon

Porous silicon can emit intense visible light at room temperature, Photoluminescent Rigid Sheet ,so it has great application prospect in the semiconductor lighting and photoelectric integration.

But when the porous silicon deposited in the air, the luminous intensity of porous silicon will be gradually weakened, and the instability of porous silicon light emitting porous silicon largest become an obstacle in the application process. This paper adopts a series of novel methods of surface treatment on Photoluminescence of porous silicon was improved after treatment, glow in the dark sand ,porous silicon luminescence intensity increased significantly. This paper studies the different active energy (800eV) effect of ion irradiation on the luminescence properties of porous silicon.

Effect of ion irradiation on the luminescence properties of porous silicon

Porous silicon can emit intense visible light at room
temperature, Photoluminescent Rigid Sheet , so it has great application prospect in the semiconductor lighting and photoelectric integration.

But when the porous silicon deposited in the air, the luminous intensity of porous silicon will be gradually weakened, glow in the dark film and the instability of porous silicon light emitting porous silicon largest become an obstacle in the application process.

This paper adopts a series of novel methods of surface treatment on Photoluminescence of porous silicon was improved after treatment, ornamental rock , porous silicon luminescence intensity increased significantly. This paper studies the different active energy (800eV) effect of ion irradiation on the luminescence properties of porous silicon.