Effect of ion irradiation on the luminescence properties of porous silicon

Porous silicon can emit intense visible light at room temperature, Photoluminescent Rigid Sheet ,so it has great application prospect in the semiconductor lighting and photoelectric integration.

But when the porous silicon deposited in the air, the luminous intensity of porous silicon will be gradually weakened, and the instability of porous silicon light emitting porous silicon largest become an obstacle in the application process. This paper adopts a series of novel methods of surface treatment on Photoluminescence of porous silicon was improved after treatment, glow in the dark sand ,porous silicon luminescence intensity increased significantly. This paper studies the different active energy (800eV) effect of ion irradiation on the luminescence properties of porous silicon.

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